maximum ratings rating symbol v alue unit continuous reverse voltage v r 75 vdc peak forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation frC 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg C55 to +150 c electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min max unit off characteristics reverse voltage leakage current i r adc (v r = 75vdc) 1.0 (v r = 75 vdc, t j = 150c) 50 (v r = 25 vdc, t j = 150c) 30 reverse breakdown voltage v (br) 75 vdc (i br = 100 adc) forward voltage v f mv (i f = 1.0 madc) 715 (i f = 10 madc) 855 (i f = 50 madc) 1000 (i f = 150 madc) 1250 diode capacitance c d 2.0 pf (v r = 0, f = 1.0 mhz) forward recovery voltage v fr C- 1.75 vdc (i f = 10 madc, t r = 20ns ) reverse recovery time t rr 6.0 ns (i f = i r = 10 madc, r l = 50 ? ) stored charge q s 4 5p c (i f = 10 madc to v r = 5.0vdc, r l = 500 ? ) 1. frC5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sotC23 3 cathode 1 anode ? device marking and ordering information device marking package shipping BAS16LT1 a6 sot-23 3000/tape&reel 1 3 2 2012-1 willas electronic corp. sot-23 plastic-encapsulate diodes b as16lt1 ?
notes: 1. a 2.0 k ? variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr figure 1. recovery time equivalent test circuit 100 10 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 t a = 85c t a = 25c t a = C 40c t a = 150c t a = 125c t a = 85c t a = 55c t a = 25c 010 20 30 4050 10 1.0 0.1 0.01 0.001 02 4 6 8 0.68 0.64 0.60 0.56 0.52 i f , forward current (ma) c d , diode capacitance (pf) v f , forward voltage (volts) figure 2. forward voltage v r , reverse voltage (volts) figure 3. leakage current v r , reverse voltage (volts) figure 4. capacitance i r , reverse current ( a) +10 v 2.0 k 820 ? 100 h 0.1 f d.u.t. 0.1 f 50 ? output pulse generator t r 50 ? input sampling oscilloscope t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) input signal i f v r 2012-1 willas electronic corp. sot-23 plastic-encapsulate diodes b as16lt1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012-1 willas electronic corp. sot-23 plastic-encapsulate diodes b as16lt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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